IR2110 DATASHEET

ir2110 datasheet
HIGH AND LOW SIDE DRIVER

IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF


Features


• Floating channel designed for bootstrap operation

Fully operational to +500V or +600V

Tolerant to negative transient voltage

dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• 3.3V logic compatible

Separate logic supply range from 3.3V to 20V

Logic and power ground ±5V offset

• CMOS Schmitt-triggered inputs with pull-down

• Cycle by cycle edge-triggered shutdown logic

• Matched propagation delay for both channels

• Outputs in phase with inputs
 
 
Description


The IR2110/IR2113 are high voltage, high speed power MOSFET and

IGBT drivers with independent high and low side referenced output chan-

nels. Proprietary HVIC and latch immune CMOS technologies enable

ruggedized monolithic construction. Logic inputs are compatible with

standard CMOS or LSTTL output, down to 3.3V logic. The output

drivers feature a high pulse current buffer stage designed for minimum

driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The

floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which

operates up to 500 or 600 volts
 
download  ir2110 datasheet

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