A Novel Fermi Level Controlled High Voltage Transistor Preventing

A Novel Fermi Level Controlled High Voltage Transistor Preventing

Fermi-level Controlled HVT(FCHVT) is a new

transistor which improves hump by turning off the FETp.

Controlling doping concentrations of gate edge of

MOSFET makes the differences of work function of poly-

gate shift the Fermi-level between FETp and FETi, and

humps are improved by increase of Vth of FETp. We

explored to control gate doping concentration with ion

implantation on MOSFET as illustrated in Fig. 2
 

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