irf630 datasheet
TYPICAL RDS(on) = 0.35 Ω
EXTREMELY HIGH dV/dt CAPABILITY
VERY LOW INTRINSIC CAPACITANCES
This power MOSFET is designed using he
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
APPLICATIONS
HIGH CURRENT SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS)
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
download irf630 datasheet
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IRF630-circuits
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